검색결과 : 36건
| No. | Article |
|---|---|
| 1 |
Co-doping of InxGa1-xAs with silicon and tellurium for improved ultra-low contact resistance Law JJM, Carter AD, Lee S, Huang CY, Lu H, Rodwell MJW, Gossard AC Journal of Crystal Growth, 378, 92, 2013 |
| 2 |
Self-consistent measurement and state tomography of an exchange-only spin qubit Medford J, Beil J, Taylor JM, Bartlett SD, Doherty AC, Rashba EI, DiVincenzo DP, Lu H, Gossard AC, Marcus CM Nature Nanotechnology, 8(9), 654, 2013 |
| 3 |
Spontaneous coherence in a cold exciton gas High AA, Leonard JR, Hammack AT, Fogler MM, Butov LV, Kavokin AV, Campman KL, Gossard AC Nature, 483(7391), 584, 2012 |
| 4 |
Semimetal/Semiconductor Nanocomposites for Thermoelectrics Lu H, Burke PG, Gossard AC, Zeng G, Ramu AT, Bahk JH, Bowers JE Advanced Materials, 23(20), 2377, 2011 |
| 5 |
Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications Liu X, Ramu AT, Bowers JE, Palmstrom CJ, Burke PG, Lu H, Gossard AC Journal of Crystal Growth, 316(1), 56, 2011 |
| 6 |
Growth of embedded ErAs nanorods on (411)A and (411)B GaAs by molecular beam epitaxy Buehl TE, LeBeau JM, Stemmer S, Scarpulla MA, Palmstrom CJ, Gossard AC Journal of Crystal Growth, 312(14), 2089, 2010 |
| 7 |
A Coherent Beam Splitter for Electronic Spin States Petta JR, Lu H, Gossard AC Science, 327(5966), 669, 2010 |
| 8 |
GdN (111) heteroepitaxy on GaN (0001) by N-2 plasma and NH3 molecular beam epitaxy Scarpulla MA, Gallinat CS, Mack S, Speck JS, Gossard AC Journal of Crystal Growth, 311(5), 1239, 2009 |
| 9 |
Height-selective etching for regrowth of self-aligned contacts using MBE Burek GJ, Wistey MA, Singisetti U, Nelson A, Thibeault J, Bank SR, Rodwell MJW, Gossard AC Journal of Crystal Growth, 311(7), 1984, 2009 |
| 10 |
Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs Baraskar AK, Wistey MA, Jain V, Singisetti U, Burek G, Thibeault BJ, Lee YJ, Gossard AC, Rodwell MJW Journal of Vacuum Science & Technology B, 27(4), 2036, 2009 |