| 1 |
Defect luminescence at n-GaN electrodes - A comparative study between n-GaN grown on sapphire substrates and on Si substrates
Huygens IM, Gomes WP, Strubbe K
Journal of the Electrochemical Society, 153(1), G72, 2006 |
| 2 |
Photocurrent multiplication at n-GaN electrodes in formic acid solutions
Huygens IM, Gomes WP, Strubbe K
Electrochimica Acta, 50(14), 2919, 2005 |
| 3 |
Subbandgap photoluminescence and electroluminescence at n-GaN electrodes in aqueous solutions
Huygens IM, Gomes WP, Theuwis A, Strubbe K
Journal of the Electrochemical Society, 150(10), G602, 2003 |
| 4 |
A photoelectrochemical study of InxGa1-xN films
Theuwis A, Strubbe K, Depestel LM, Gomes WP
Journal of the Electrochemical Society, 149(5), E173, 2002 |
| 5 |
Photoanodic dissolution of n-InP: An electrochemical impedance study
Hens Z, Gomes WP
Journal of Physical Chemistry B, 104(32), 7725, 2000 |
| 6 |
Electrochemistry and photoetching of n-GaN
Huygens IM, Strubbe K, Gomes WP
Journal of the Electrochemical Society, 147(5), 1797, 2000 |
| 7 |
The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states. 2. The n-GaAs/Fe3+ system as an experimental example
Hens Z, Gomes WP
Journal of Physical Chemistry B, 103(1), 130, 1999 |
| 8 |
Electroreduction of Co2+ and Ni2+ at III-V semiconductors and properties of the semiconductor/metal interfaces formed
Strubbe K, Vereecken PM, Gomes WP
Journal of the Electrochemical Society, 146(4), 1412, 1999 |
| 9 |
Electrochemical and etching behavior of InP and In0.53Ga0.47As in alkaline hypobromite solutions
Theuwis A, Gomes WP
Journal of the Electrochemical Society, 146(5), 1903, 1999 |
| 10 |
The electrochemical impedance of reversible semiconductor electrodes : The n-InP/methylviologen electrode as an example
Hens Z, Gomes WP
Electrochimica Acta, 43(18), 2577, 1998 |
