In semiconductor electrochemistry, the Faradaic resistance corresponding to an electrode reaction involving direct exchange of majority carriers depends strongly upon the rate of the reverse reaction. Considering, for example, electron capture reactions at n-type semiconductors, this resistance takes a value typical for reactions proportional to the density of conduction-band electrons at the semiconductor surface, if the rate of the reverse reaction is negligible. In contrast, the Faradaic resistance becomes smaller than this value if the partial electrical current density of the reverse reaction is large as compared to the net electrical current density. This is shown theoretically and is demonstrated experimentally at the n-InP/methylviologen system.