| 1 |
High-efficiency AlInSb mid-infrared LED with dislocation filter layers for gas sensors
Morohara O, Geka H, Fujita H, Ueno K, Yasuda D, Sakurai Y, Shibata Y, Kuze N
Journal of Crystal Growth, 518, 14, 2019 |
| 2 |
Low temperature transport property of the InSb and InAsSb quantum wells with Al0.1In0.9Sb barrier layers grown by MBE
Shibasaki I, Ishida S, Geka H, Manago T
Journal of Crystal Growth, 425, 76, 2015 |
| 3 |
Sb irradiation effect on growth of GaAs thin film on Si (111) substrate
Morohara O, Geka H, Moriyasu Y, Kuze N
Journal of Crystal Growth, 378, 113, 2013 |
| 4 |
Effects of AlGaAsSb electron supply layer for InGaAs/InAlAs metamorphic HEMTs on GaAs substrate
Geka H, Yamada S, Toita M, Nagase K, Kuze N
Journal of Crystal Growth, 323(1), 522, 2011 |
| 5 |
Transport properties of InSb and InAs0.1Sb0.9 thin films sandwiched between Al0.1In0.9Sb layers grown by molecular beam epitaxy
Shibasaki I, Geka H, Okamoto A
Journal of Crystal Growth, 311(7), 1696, 2009 |
| 6 |
Hall effect and magnetoresistance analysis by electron-hole coexisting model in AlInSb/InAsSb quantum wells
Manago T, Nisizako N, Ishida S, Geka H, Shibasaki I
Journal of Crystal Growth, 311(7), 1711, 2009 |
| 7 |
Quantum transport and spin-orbit interaction in Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wells
Nishizako N, Manago T, Ishida S, Geka H, Shibasaki I
Journal of Crystal Growth, 311(7), 2128, 2009 |
| 8 |
Properties of InSb single-crystal thin films sandwiched by Al0.1In0.9Sb layers with 0.5% lattice mismatch grown on GaAs
Geka H, Okamoto A, Yamada S, Goto H, Yoshida K, Shibasaki I
Journal of Crystal Growth, 301, 152, 2007 |
| 9 |
The thickness dependence of InAs sandwiched by GaAlAsSb layers grown by MBE
Shibasaki I, Geka H, Okamoto A, Shibata Y
Journal of Crystal Growth, 278(1-4), 162, 2005 |
| 10 |
Transport properties of InSb and InAs thin films on GaAs substrates
Okamoto A, Geka H, Shibasaki I, Yoshida K
Journal of Crystal Growth, 278(1-4), 604, 2005 |
