InAs sandwiched between AlGaAsSb insulating layers lattice matched to InAs were grown by molecular beam epitaxy and the InAs thickness dependence of the electrical and temperature properties were studied. The results of this study show that the AlGaAsSb insulating layers almost eliminated a large lattice mismatch effect at InAs/GaAs hetero interface and have increased electron mobility of InAs layer. It was also shown that the electron mobility and sheet electron density of InAs layer have a substantial thickness dependence. The temperature dependence of the electron mobility and sheet electron densities also discussed with respect to InAs thickness. © 2005 Elsevier B.V. All rights reserved.