검색결과 : 10건
| No. | Article |
|---|---|
| 1 |
Effects of N2O anneal on channel mobility of 4H-SiC MOSFET and gate oxide reliability Fujihira K, Tarui Y, Ohtsuka KI, Imaizumi M, Takami T Materials Science Forum, 483, 697, 2005 |
| 2 |
Characteristics of 4H-SiC MOS interface annealed in N2O Fujihira K, Tarui Y, Imaizumi M, Ohtsuka K, Takami T, Shiramizu T, Kawase K, Tanimura J, Ozeki T Solid-State Electronics, 49(6), 896, 2005 |
| 3 |
Epitaxial growth of 4H-SiC(0 3 (3)over-bar 8) and control of MOS interface Kimoto T, Hirao T, Fujihira K, Kosugi H, Danno K, Matsunami H Applied Surface Science, 216(1-4), 497, 2003 |
| 4 |
Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition Fujihira K, Kimoto T, Matsunami H Journal of Crystal Growth, 255(1-2), 136, 2003 |
| 5 |
Recent achievements and future challenges in SiC homoepitaxial growth Kimoto T, Nakazawa S, Fujihira K, Hirao T, Nakamura S, Chen Y, Hashimoto K, Matsunami H Materials Science Forum, 389-3, 165, 2002 |
| 6 |
Fast epitaxial growth of 4H-SiC by chimney-type hot-wall CVD Fujihira K, Kimoto T, Matsunami H Materials Science Forum, 389-3, 175, 2002 |
| 7 |
Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD Fujihira K, Kimoto T, Matsunami H Materials Science Forum, 433-4, 161, 2002 |
| 8 |
Complete micropipe dissociation in 4H-SiC(03(3)over-bar8) epitaxial growth and its impact on reverse characteristics of Schottky barrier diodes Kimoto T, Danno K, Fujihira K, Shiomi H, Matsunami H Materials Science Forum, 433-4, 197, 2002 |
| 9 |
High temperature deep level transient spectroscopy investigations of n-type 4H-SiC epitaxial layers Schoner A, Fujihira K, Kimoto T, Matsunami H Materials Science Forum, 433-4, 387, 2002 |
| 10 |
Recent progress in SiC epitaxial growth and device processing technology Kimoto T, Yano H, Tamura S, Miyamoto N, Fujihira K, Negoro Y, Matsunami H Materials Science Forum, 353-356, 543, 2001 |