Fast epitaxial growth of 4H-SiC in a vertical hot-wall reactor is described. A high growth rate of 25similar to60 mum/h, 5 to 10 times higher than the conventional growth, was achieved at 1700degreesC by the enhanced decomposition of Si clusters. Mirror-like surface morphology has been obtained for the epilayers grown at 25similar to60 mum/h by the control of H(2) etching during the heating process, in which C(3)H(8) was introduced at 1200degreesC and SiH(4) at 1300degreesC. High-quality epilayers with a net donor concentration of low 10(13) cm(-3) or below was attained. The DLTS measurements up to 820 K have found that the EH(6/7) center could be reduced by increasing C/Si ratio.