화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 Hybrid optical maskless lithography: Scaling beyond the 45 nm node
Fritze M, Bloomstein TM, Tyrrell B, Fedynyshyn TH, Efremow NN, Hardy DE, Cann S, Lennon D, Spector S, Rothschild M, Brooker P
Journal of Vacuum Science & Technology B, 23(6), 2743, 2005
2 Fabrication of three-dimensional mode converters for silicon-based integrated optics
Fritze M, Knecht J, Bozler C, Keast C, Fijol J, Jacobson S, Keating P, LeBlanc J, Fike E, Kessler B, Frish M, Manolatou C
Journal of Vacuum Science & Technology B, 21(6), 2897, 2003
3 Dry etching of amorphous-Si gates for deep sub-100 nm silicon-on-insulator complementary metal-oxide semiconductor
Yost D, Forte T, Fritze M, Astolfi D, Suntharalingam V, Chen CK, Cann S
Journal of Vacuum Science & Technology B, 20(1), 191, 2002
4 Optical imaging properties of dense phase shift feature patterns
Fritze M, Tyrrell B, Mallen R, Wheeler B, Rhyins P, Martin P
Journal of Vacuum Science & Technology B, 20(6), 2589, 2002
5 Gratings of regular arrays and trim exposures for ultralarge scale integrated circuit phase-shift lithography
Fritze M, Tyrrell B, Astolfi D, Yost D, Davis P, Wheeler B, Mallen R, Jarmolowicz J, Cann S, Chan D, Rhyins P, Carney C, Ferri J, Blachowicz BA
Journal of Vacuum Science & Technology B, 19(6), 2366, 2001
6 Sub-100 nm silicon on insulator complimentary metal-oxide semiconductor transistors by deep ultraviolet optical lithography
Fritze M, Burns J, Wyatt PW, Chen CK, Gouker P, Chen CL, Keast C, Astolfi D, Yost D, Preble D, Curtis A, Davis P, Cann S, Deneault S, Liu HY
Journal of Vacuum Science & Technology B, 18(6), 2886, 2000
7 Sub-100 nm KrF lithography for complementary metal-oxide-semiconductor circuits
Fritze M, Astolfi D, Liu H, Chen CK, Suntharalingam V, Preble D, Wyatt PW
Journal of Vacuum Science & Technology B, 17(2), 345, 1999
8 Nanofabrication with deep-ultraviolet lithography and resolution enhancements
Fritze M, Palmateer S, Maki P, Knecht J, Chen CK, Astolfi D, Cann S, Denault S, Krohn K, Wyatt PW
Journal of Vacuum Science & Technology B, 17(6), 3310, 1999