| 1 |
Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies
Herrmann T, Flachowsky S, Illgen R, Klix W, Stenzel R, Hontschel J, Feudel T, Horstmann M
Journal of Vacuum Science & Technology B, 28(1), C1G7, 2010 |
| 2 |
Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing
Illgen R, Flachowsky S, Herrmann T, Klix W, Stenzel R, Feudel T, Hontschel J, Horstmann M
Journal of Vacuum Science & Technology B, 28(1), C1I12, 2010 |
| 3 |
Advanced SOI CMOS transistor technology for high performance microprocessors
Horstmann M, Wiatr M, Wei A, Hoentschel J, Feudel T, Scheiper T, Stephan R, Gerhadt M, Krugel S, Raab M
Solid-State Electronics, 53(12), 1212, 2009 |
| 4 |
Physically based modelling of two-dimensional and three-dimensional implantation profiles : Influence of damage accumulation
Murthy CS, Posselt M, Feudel T
Journal of Vacuum Science & Technology B, 16(1), 440, 1998 |
| 5 |
Modeling of Damage Accumulation During Ion-Implantation into Single-Crystalline Silicon
Posselt M, Schmidt B, Murthy CS, Feudel T, Suzuki K
Journal of the Electrochemical Society, 144(4), 1495, 1997 |
