검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs Jousseaume V, Fantini A, Nodin JF, Guedj C, Persico A, Buckley J, Tirano S, Lorenzi P, Vignon R, Feldis H, Minoret S, Grampeix H, Roule A, Favier S, Martinez E, Calka P, Rochat N, Auvert G, Barnes JP, Gonon P, Vallee C, Perniola L, De Salvo B Solid-State Electronics, 58(1), 62, 2011 |
| 2 |
Carbon-doped GeTe: A promising material for Phase-Change Memories Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F Solid-State Electronics, 65-66, 197, 2011 |
| 3 |
Pore sealing of a porous dielectric by using a thin PECVD a-SiC : H conformal liner Jousseaume V, Fayolle M, Guedj C, Haumesser PH, Huguet C, Pierre F, Pantel R, Feldis H, Passemard G Journal of the Electrochemical Society, 152(10), F156, 2005 |
| 4 |
Dielectric etching for 0.18 mu m technologies Berruyer P, Vinet F, Feldis H, Blanc R, Lerme M, Morand Y, Poiroux T Journal of Vacuum Science & Technology A, 16(3), 1604, 1998 |