Two types of plasma source, high density plasma and magnetically enhanced reactive ion etching, have been compared on contact and vias etch process performances for 0.25 mu m complementary metal-oxide semiconductor technology application. High density plasma is able to provide high oxide etch rate, low contact resistance and high yield on 350 nm contact size after etching. On the other hand, selectivity to photoresist is low and nonuniform across the wafer. Moreover, due to interaction between high density plasma and deep ultraviolet photoresist, striations are transferred on contact walls. Magnetically enhanced reactive ion etching is able to provide uniform etch rate and high selectivity to photoresist. Low contact resistance and high yield have also been obtained on 300 nm contact size after etching. The main disadvantage of this plasma source is the low oxide etch rate. Antenna effects due to contact opening have been evaluated on test structures. The results show a minimized induced damage effect for the high density plasma type reactor.