검색결과 : 8건
No. | Article |
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1 |
SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays Andersson JY, Ericsson P, Radamson HH, Wissmar SGE, Kolandouz M Solid-State Electronics, 60(1), 100, 2011 |
2 |
Realisation of large area 3C-SiC MOSFETs Schoner A, Bakowski M, Ericsson P, Stromberg H, Nagasawa H, Abe M Materials Science Forum, 483, 801, 2005 |
3 |
Elimination of current instability and improvement of RF power performance usingSi(3)N(4) passivation in SiC lateral epitaxy MESFETs Cha HY, Choi YC, Konstantinov AO, Harris CI, Ericsson P, Eastman LF, Spencer MG Solid-State Electronics, 48(7), 1233, 2004 |
4 |
High-performance silicon carbide MESFET utilizing lateral epitaxy Konstantinov AO, Harris CI, Ericsson P Materials Science Forum, 389-3, 1375, 2002 |
5 |
Design and technology considerations for a RF BJT in SiC Bakowski M, Ericsson P, Harris C, Konstantinov A, Savage S, Schoner A Materials Science Forum, 433-4, 797, 2002 |
6 |
Progress towards SiC products Harris CI, Savage S, Konstantinov A, Bakowski M, Ericsson P Applied Surface Science, 184(1-4), 393, 2001 |
7 |
Influence of SC-1/SC-2 Cleaning on Wafer-Bonded Silicon Dioxide Structures Ericsson P, Bengtsson S Journal of the Electrochemical Society, 143(11), 3722, 1996 |
8 |
Charge-Carrier Injection into the Buried Oxide of Wafer-Bonded Silicon-on-Insulator Materials Bengtsson S, Ericsson P, Sodervall U, Mitani K, Abe T Journal of the Electrochemical Society, 142(8), 2721, 1995 |