화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays
Andersson JY, Ericsson P, Radamson HH, Wissmar SGE, Kolandouz M
Solid-State Electronics, 60(1), 100, 2011
2 Realisation of large area 3C-SiC MOSFETs
Schoner A, Bakowski M, Ericsson P, Stromberg H, Nagasawa H, Abe M
Materials Science Forum, 483, 801, 2005
3 Elimination of current instability and improvement of RF power performance usingSi(3)N(4) passivation in SiC lateral epitaxy MESFETs
Cha HY, Choi YC, Konstantinov AO, Harris CI, Ericsson P, Eastman LF, Spencer MG
Solid-State Electronics, 48(7), 1233, 2004
4 High-performance silicon carbide MESFET utilizing lateral epitaxy
Konstantinov AO, Harris CI, Ericsson P
Materials Science Forum, 389-3, 1375, 2002
5 Design and technology considerations for a RF BJT in SiC
Bakowski M, Ericsson P, Harris C, Konstantinov A, Savage S, Schoner A
Materials Science Forum, 433-4, 797, 2002
6 Progress towards SiC products
Harris CI, Savage S, Konstantinov A, Bakowski M, Ericsson P
Applied Surface Science, 184(1-4), 393, 2001
7 Influence of SC-1/SC-2 Cleaning on Wafer-Bonded Silicon Dioxide Structures
Ericsson P, Bengtsson S
Journal of the Electrochemical Society, 143(11), 3722, 1996
8 Charge-Carrier Injection into the Buried Oxide of Wafer-Bonded Silicon-on-Insulator Materials
Bengtsson S, Ericsson P, Sodervall U, Mitani K, Abe T
Journal of the Electrochemical Society, 142(8), 2721, 1995