화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Optical characterization of full SiC wafer
El Harrouni I, Bluet JM, Ziane D, Mermoux M, Baillet F, Guillot G
Materials Science Forum, 457-460, 593, 2004
2 Epitaxial growth of 4H-SiC with hexamethyldisilane HMDS
Sartel C, Souliere V, Dazord J, Monteil Y, El-Harrouni I, Bluet JM, Guillot G
Materials Science Forum, 389-3, 263, 2002
3 Characterization of homoepitaxial 4H-SiC layer grown from silane/propane system
Sartel C, Bluet JM, Souliere V, El-Harrouni I, Monteil Y, Mermoux M, Guillot G
Materials Science Forum, 433-4, 165, 2002
4 Investigation of defects in 4H-SiC by synchrotron topography, Raman spectroscopy imaging and photoluminescence spectroscopy imaging
Pernot E, El Harrouni I, Mermoux M, Bluet JM, Anikin M, Chaussende D, Pons M, Madar R
Materials Science Forum, 433-4, 265, 2002
5 Application of UV scanning photoluminescence spectroscopy for minority carrier lifetime mapping
Masarotto L, Bluet JM, El Harrouni I, Guillot G
Materials Science Forum, 433-4, 349, 2002