검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
InAs/InGaAsN quantum dots emitting at 1.55 mu m grown by molecular beam epitaxy Ustinov VM, Egorov AY, Odnoblyudov VA, Kryzhanovskaya NV, Musikhin YG, Tsatsul'nikov AF, Alferov ZI Journal of Crystal Growth, 251(1-4), 388, 2003 |
| 2 |
Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures Egorov AY, Odnobludov VA, Mamutin VV, Zhukov AE, Tsatsul'nikov AF, Kryzhanovskaya NV, Ustinov VM, Hong YG, Tu CW Journal of Crystal Growth, 251(1-4), 417, 2003 |
| 3 |
Growth of GaInNAs quaternaries using a digital alloy technique Hong YG, Egorov AY, Tu CW Journal of Vacuum Science & Technology B, 20(3), 1163, 2002 |
| 4 |
Growth of high quality InGaAsN heterostructures and their laser application Egorov AY, Bernklau D, Borchert B, Illek S, Livshits D, Rucki A, Schuster M, Kaschner A, Hoffmann A, Dumitras G, Amann MC, Riechert H Journal of Crystal Growth, 227, 545, 2001 |
| 5 |
Spin-polarized electron transport and emission from strained superlattices Ambrajei AN, Clendenin JE, Egorov AY, Mamaev YA, Maruyama T, Mulhollan GA, Subashiev AV, Yashin YP, Ustinov VM, Zhukov AE Applied Surface Science, 166(1-4), 40, 2000 |