| 1 |
A THz-range planar NDR device utilizing ballistic electron acceleration in GaN
Aslan B, Eastman LF
Solid-State Electronics, 64(1), 57, 2011 |
| 2 |
Direct-write composition patterning of InGaN by focused thermal beam during molecular-beam epitaxy
Chen X, Schaff WJ, Eastman LF
Journal of Vacuum Science & Technology B, 25(3), 974, 2007 |
| 3 |
C-doped semi-insulating GaNHFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance
Choi YC, Shi J, Pophristic M, Spencer MG, Eastman LF
Journal of Vacuum Science & Technology B, 25(6), 1836, 2007 |
| 4 |
Fabrication and characterization of high breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire substrates
Choi YC, Pophristic M, Peres B, Spencer MG, Eastman LF
Journal of Vacuum Science & Technology B, 24(6), 2601, 2006 |
| 5 |
Low-resistance Ohmic contacts developed on undoped AlGaN/GaN-based high electron mobility transistors with AlN interlayer
Sun YJ, Eastman LF
Journal of Vacuum Science & Technology B, 24(6), 2723, 2006 |
| 6 |
Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs
Cha HY, Choi YC, Eastman LF, Spencer MG, Ardaravicius L, Matulionis A, Kiprijanovic O
Materials Science Forum, 483, 861, 2005 |
| 7 |
Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements
Swartz CH, Tompkins RP, Giles NC, Myers TH, Lu H, Schaff WJ, Eastman LF
Journal of Crystal Growth, 269(1), 29, 2004 |
| 8 |
Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors
Hwang JH, Schaff WJ, Green BM, Cha HY, Eastman LF
Solid-State Electronics, 48(2), 363, 2004 |
| 9 |
Elimination of current instability and improvement of RF power performance usingSi(3)N(4) passivation in SiC lateral epitaxy MESFETs
Cha HY, Choi YC, Konstantinov AO, Harris CI, Ericsson P, Eastman LF, Spencer MG
Solid-State Electronics, 48(7), 1233, 2004 |
| 10 |
Effects of transparent Pt metal layer on performance of InGaN/GaN multiple-quantum well light-emitting diodes
Huh C, Schaff WJ, Eastman LF, Park SJ
Electrochemical and Solid State Letters, 6(6), G79, 2003 |
