Journal of Vacuum Science & Technology B, Vol.24, No.6, 2723-2725, 2006
Low-resistance Ohmic contacts developed on undoped AlGaN/GaN-based high electron mobility transistors with AlN interlayer
A low-resistance Ohmic contact on undoped GaN/AlGaN/AlN (10 angstrom)/GaN high electron mobility transistors is first demonstrated using a Ta/Ti/Al/Mo/Au metallization scheme. A contact resistance of 0.16 +/- 0.03 Omega mm is achieved by rapid thermal annealing of the evaporated contact at 700 degrees C for 1 min followed by 800 degrees C for 30 s in a N-2 ambient. Excellent edge acuity is also demonstrated for this annealed Ta/Ti/Al/Mo/Au Ohmic contact. (c) 2006 American Vacuum Society.