| 1 |
All-optical circular polarization switching phenomenon observed in photo chemically etched silicon
Yamamoto N
Applied Surface Science, 216(1-4), 334, 2003 |
| 2 |
Surface diffusion model accounting for the temperature dependence of tungsten etching characteristics in a SF6 magnetoplasma
Bounasri F, Pelletier J, Moisan M, Chaker M
Journal of Vacuum Science & Technology B, 16(3), 1068, 1998 |
| 3 |
Reactive Ion Etching Induced Damage with Gas-Mixtures Chf3 O2 and SF6 O2
Wu W, Mclarty PK
Journal of Vacuum Science & Technology A, 13(1), 67, 1995 |
| 4 |
Damage to Si Substrates During SiO2 Etching - A Comparison of Reactive Ion Etching and Magnetron-Enhanced Reactive Ion Etching
Gu T, Ditizio RA, Fonash SJ, Awadelkarim OO, Ruzyllo J, Collins RW, Leary HJ
Journal of Vacuum Science & Technology B, 12(2), 567, 1994 |
| 5 |
Comparison of Advanced Plasma Sources for Etching Applications .4. Plasma-Induced Damage in a Helicon and a Multipole Electron-Cyclotron-Resonance Source
Blayo N, Tepermeister I, Benton JL, Higashi GS, Boone T, Onuoha A, Klemens FP, Ibbotson DE, Sawin HH
Journal of Vacuum Science & Technology B, 12(3), 1340, 1994 |
