화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 An efficient channel segmentation approach for a large-signal NQS MOSFET model
Bucher M, Bazigos A
Solid-State Electronics, 52(2), 275, 2008
2 A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism
Sallese JM, Krurnmenacher F, Pregaldiny F, Lallement C, Roy A, Enz C
Solid-State Electronics, 49(3), 485, 2005
3 Derivation of Shockley-Read-Hall recombination rates in bulk and PD-SOI MOSFET's channels valid in all modes of operation
Sallese JM, Krummenacher F, Fazan P
Solid-State Electronics, 48(9), 1539, 2004
4 Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model
Sallese JM, Bucher M, Krummenacher F, Fazan P
Solid-State Electronics, 47(4), 677, 2003