We propose a design oriented charge-based model for undoped DG MOSFETs under synunetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and charges that in turn lead to very simple relationships among the physical quantities. Finally, we emphasize on the link that exists between this approach and the EKV formalism derived for bulk MOSFETs, which in turn leads to the unique g(ms)/I-D design methodology for DG architectures. (C) 2004 Elsevier Ltd. All rights reserved.