검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
New modeling method for the dielectric relaxation of a DRAM cell capacitor Choi S, Sun W, Shin H Solid-State Electronics, 140, 29, 2018 |
| 2 |
Improved leakage current properties of ZrO2/(Ta/Nb)O-x-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors Onaya T, Nabatame T, Sawada T, Kurishima K, Sawamoto N, Ohi A, Chikyow T, Ogura A Thin Solid Films, 655, 48, 2018 |
| 3 |
A mechanism for asymmetric data writing failure Lee MJ, Park KW Solid-State Electronics, 56(1), 211, 2011 |
| 4 |
A comparative study of the DRAM leakage mechanism for planar and recessed channel MOSFETs Lee MJ, Baek CK, Park S, Chung IY, Park YJ Solid-State Electronics, 53(9), 998, 2009 |