화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Influence of crystal orientation and body doping on trigate transistor performance
Landgraf E, Rosner W, Stadele M, Dreeskornfeld L, Hartwich J, Hofmann F, Kretz J, Lutz T, Luyken RJ, Schulz T, Specht M, Risch L
Solid-State Electronics, 50(1), 38, 2006
2 NVM based on FinFET device structures
Hofmann F, Specht M, Dorda U, Kommling R, Dreeskornfeld L, Kretz J, Stadele M, Rosner W, Risch L
Solid-State Electronics, 49(11), 1799, 2005
3 Impact of technology parameters on device performance of UTB-SOI CMOS
Schulz T, Pacha C, Luyken RJ, Stadele M, Hartwich J, Dreeskornfeld L, Landgraf E, Kretz J, Rosner W, Specht M, Hofmann F, Risch L
Solid-State Electronics, 48(4), 521, 2004
4 Nanoscale FinFETs for low power applications
Rosner W, Landgraf E, Kretz J, Dreeskornfeld L, Schafer H, Stadele M, Schulz T, Hofmann F, Luyken RJ, Specht M, Hartwich J, Pamler W, Risch L
Solid-State Electronics, 48(10-11), 1819, 2004
5 Nanostructuring of Mo/Si multilayers by means of reactive ion etching using a three-level mask
Dreeskornfeld L, Haindl G, Kleineberg U, Heinzmann U, Shi F, Volland B, Rangelow IW, Majkova E, Luby S, Kostic, Matay L, Hrkut P, Hudek P, Lee HY
Thin Solid Films, 458(1-2), 227, 2004
6 High precision etching of Si/SiO2 on a high-density helicon etcher for nanoscale devices
Dreeskornfeld L, Hartwich J, Kretz J, Schmitt-Landsiedel D, Loraine D, Powell K, Thomas DJ
Journal of the Electrochemical Society, 150(11), G702, 2003
7 Design considerations for fully depleted SOI transistors in the 25-50 nm gate length regime
Luyken RJ, Schulz T, Hartwich J, Dreeskornfeld L, Stadele M, Rosner W
Solid-State Electronics, 47(7), 1199, 2003
8 Nanoscale electron beam lithography and etching for fully depleted silicon-on-insulator devices
Dreeskornfeld L, Hartwich J, Kretz J, Risch L, Roesner W, Schmitt-Landsiedel D
Journal of Vacuum Science & Technology B, 20(6), 2777, 2002
9 W/Si multilayers deposited by hot-filament MOCVD
Hamelmann F, Petri SHA, Klipp A, Haindl G, Hartwich J, Dreeskornfeld L, Kleineberg U, Jutzi P, Heinzmann U
Thin Solid Films, 338(1-2), 70, 1999