검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001) Buchholt K, Eklund P, Jensen J, Lu J, Ghandi R, Domeij M, Zetterling CM, Behan G, Zhang H, Spetz AL, Hultman L Journal of Crystal Growth, 343(1), 133, 2012 |
| 2 |
Doping of electrochemically etched pore arrays in n-type silicon: Processing and electrical characterization Badel X, Domeij M, Linnros J Journal of the Electrochemical Society, 152(4), G252, 2005 |
| 3 |
Current gain of 4H-SiC bipolar transistors including the effect of interface states Domeij M, Danielsson E, Lee HS, Zetterling CM, Ostling M Materials Science Forum, 483, 889, 2005 |
| 4 |
Electrical characteristics of 4H-SiC BJTs at elevated temperatures Lee HS, Domeij M, Danielsson E, Zetterling CM, Ostling M Materials Science Forum, 483, 897, 2005 |
| 5 |
A 4H-SiC BJT with an epitaxially regrown extrinsic base layer Danielsson E, Domeij M, Lee HS, Zetterling CM, Ostling M, Schoner A, Hallin C Materials Science Forum, 483, 905, 2005 |
| 6 |
Comparison between implanted and epitaxial pin-diodes on 4H-silicon carbide Zimmermann U, Domeij M, Hallen A, Ostling M Materials Science Forum, 457-460, 1037, 2004 |
| 7 |
Extrinsic base design of SiC bipolar transistors Danielsson E, Domeij M, Zetterling CM, Ostling M, Schoner A Materials Science Forum, 457-460, 1117, 2004 |
| 8 |
Simulation study of 4H-SiC junction-gated MOSFETs from 300 K to 773 K Lee HS, Koo SM, Zetterling CM, Danielsson E, Domeij M, Ostling M Materials Science Forum, 457-460, 1437, 2004 |
| 9 |
Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors Danielson E, Zetterling CM, Domeij M, Ostling M, Forsberg U, Janzen E Solid-State Electronics, 47(4), 639, 2003 |
| 10 |
Measurement and device simulation of avalanche breakdown in high-voltage 4H-SiC diodes including the influence of macroscopic defects Domeij M, Brunahl H, Ostling M Materials Science Forum, 389-3, 1277, 2002 |