Silicon p-n diodes formed in the walls of deep pores have been electrically characterized. The pores were electrochemically etched in low-doped n-type silicon substrates, and the entire pore array was doped p(+) by boron diffusion at 1050 degrees C. Two different process flows were investigated to disconnect the p(+) layers from one pore to another. The first consists of removing a few micrometers of silicon at the top of the sample using reactive ion etching after diffusion while the second enables the prevention of doping at the top of the pore walls with an oxide, acting as a barrier during diffusion. Current-voltage and capacitance-voltage characteristics of p-n junctions are presented and related parameters, such as the serial resistance and the ideality factor are discussed. The results show good rectifying behavior of the diodes with a reverse current about four to five decades smaller than the forward current. Measurements with two pores connected in a transistor-like configuration (p(+)/n(-)/p(+)), were also performed. Device simulations were used to examine the device behavior. Finally, our results demonstrate that pores could work as individual detector pixels for moderate reverse voltages, suitable for radiation imaging applications. (c) 2005 The Electrochemical Society. All rights reserved.