| 1 |
Behavior of fluorocarbon species near temperature controlled and radio frequency biased metal plate in C4F8 plasma
Doh HH, Horiike Y
Journal of Vacuum Science & Technology A, 20(4), 1420, 2002 |
| 2 |
Effects of Bias Frequency on Reactive Ion Etching Lag in an Electron-Cyclotron-Resonance Plasma-Etching System
Doh HH, Yeon CK, Whang KW
Journal of Vacuum Science & Technology A, 15(3), 664, 1997 |
| 3 |
Effect of Hydrogen Addition to Fluorocarbon Gases (CF4, C4F8) in Selective SiO2/Si Etching by Electron-Cyclotron-Resonance Plasma
Doh HH, Kim JH, Whang KW, Lee SH
Journal of Vacuum Science & Technology A, 14(3), 1088, 1996 |
| 4 |
Mechanism of Selective SiO2/Si Etching with Fluorocarbon Gases (CF4, C4F8) and Hydrogen Mixture in Electron-Cyclotron-Resonance Plasma-Etching System
Doh HH, Kim JH, Lee SH, Whang KW
Journal of Vacuum Science & Technology A, 14(5), 2827, 1996 |
| 5 |
Damage and Contamination in Low-Temperature Electron-Cyclotron-Resonance Plasma-Etching
Whang KW, Lee SH, Doh HH, Kim JS
Journal of Vacuum Science & Technology A, 12(6), 3091, 1994 |
