검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
Use of high temperature hydrogen annealing to remove sub-surface damage in bulk GaN Myers TH, VanMil BL, Holbert LJ, Peng CY, Stinespring CD, Alam J, Freitas JA, Dmitriev VA, Pechnikov A, Shapovalova Y, Ivantsov V Journal of Crystal Growth, 246(3-4), 244, 2002 |
| 2 |
GaN grown by hydride-metal organic vapor phase epitaxy (H-MOVPE) on lattice-matched oxide and silicon substrates Mastro M, Kryliouk OM, Dann T, Anderson TJ, Nikolaev AE, Melnik YV, Dmitriev VA Materials Science Forum, 389-3, 1473, 2002 |
| 3 |
High breakdown M-I-M structures on bulk AlN Luo B, Johnson JW, Kryliouk O, Ren F, Pearton SJ, Chu SNG, Nikolaev AE, Melnik YV, Dmitriev VA, Anderson TJ Solid-State Electronics, 46(4), 573, 2002 |
| 4 |
Electrical characterization of Schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates Kuznetsov NI, Mynbaeva MG, Melnychuk G, Dmitriev VA, Saddow SE Applied Surface Science, 184(1-4), 483, 2001 |
| 5 |
Studies of deep centers in high-resistivity p-GaN films doped with Zn and grown on SIC by hydride vapor phase epitaxy Polyakov AY, Govorkov AV, Smirnov NB, Nikolaev AE, Nikitina IP, Dmitriev VA Solid-State Electronics, 45(2), 249, 2001 |
| 6 |
Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates Polyakov AY, Govorkov AV, Smirnov NB, Nikolaev AE, Nikitina IP, Dmitriev VA Solid-State Electronics, 45(2), 261, 2001 |
| 7 |
Structural investigation on the nature of surface defects present in silicon carbide wafers containing varying amount of micropipes Shamsuzzoha M, Saddow SE, Schattner TE, Jin L, Dudley M, Rendakova SV, Dmitriev VA Materials Science Forum, 338-3, 453, 2000 |
| 8 |
Misfit dislocations at the GaN/SiC interface and their interaction with point defects Polyakov AY, Govorkov AV, Smirnov NB, Theys B, Jomard F, Nikitina IP, Nikolaev AE, Dmitriev VA Solid-State Electronics, 44(11), 1955, 2000 |