화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Growth of SiC and GaN on porous buffer layers
Mynbaeva M, Savkina N, Tregubova A, Scheglov M, Lebedev A, Zubrilov A, Titkov A, Kryganovski A, Mynbaev K, Seredova N, Tsvetkov D, Stepanov S, Cherenkov A, Kotousova I, Dimitriev VA
Materials Science Forum, 338-3, 225, 2000
2 4H-SiC layers grown by liquid phase epitaxy on 4H-SiC off-axis substrates
Kuznetsov N, Morozov A, Bauman D, Ivantsov V, Sukhoveev V, Nikitina I, Zubrilov A, Rendakova S, Dimitriev VA, Hofman D, Masri P
Materials Science Forum, 338-3, 229, 2000
3 Micropipe healing in liquid phase epitaxial growth of SiC
Yakimova R, Syvajarvi M, Rendakova S, Dimitriev VA, Henry A, Janzen E
Materials Science Forum, 338-3, 237, 2000
4 4H-SiC device scaling development on repaired micropipe substrates
Schattner TE, Casady JB, Smith MCD, Mazzola MS, Dimitriev VA, Rentakova SV, Saddow SE
Materials Science Forum, 338-3, 1203, 2000