We investigated properties of undoped 4H-SiC epitaxial layers grown on 4H-SiC substrates by liquid phase epitaxy(LPE). Vertical dipping version of LPE method was employed. Growth was carried out from Si-based melt contained in graphite crucible in the temperature range from 1550 to 1700 degreesC. Growth rate and layer thickness ranged from 0.1 to 1 micron per hour and 1 to 9 microns, respectively. Crystal quality of grown material was evaluated by x-ray diffraction and photoluminescence (PL). Background doping concentration and minority carrier diffusion lengths were measured.