화학공학소재연구정보센터
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No. Article
1 AlxIn1-xAsySb1-y alloys lattice matched to InAs(100) grown by molecular beam epitaxy
Rojas-Ramirez JS, Wang S, Contreras-Guerrero R, Caro M, Bhatnagar K, Holland M, Oxland R, Doornbos G, Passlack M, Diaz CH, Droopad R
Journal of Crystal Growth, 425, 33, 2015
2 MOVPE-grown InAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures
Ramvall P, Wang CH, Astromskas G, Vellianitis G, Holland M, Droopad R, Samuelson L, Wernersson LE, Passlack M, Diaz CH
Journal of Crystal Growth, 374, 43, 2013
3 Growth of heterostructures on InAs for high mobility device applications
Contreras-Guerrero R, Wang S, Edirisooriya M, Priyantha W, Rojas-Ramirez JS, Bhuwalka K, Doornbos G, Holland M, Oxland R, Vellianitis G, Van Dal M, Duriez B, Passlack M, Diaz CH, Droopad R
Journal of Crystal Growth, 378, 117, 2013
4 High crystalline quality Ge grown by MOCVD inside narrow shallow trench isolation defined on Si(001) substrates
Vellianitis G, van Dal MJH, Duriez B, Lee TL, Passlack M, Wann CH, Diaz CH
Journal of Crystal Growth, 383, 9, 2013
5 Series Resistance and Mobility Extraction Method in Nanoscale MOSFETs
Chen WPN, Su P, Goto KI, Diaz CH
Journal of the Electrochemical Society, 156(1), H34, 2009
6 Influence of preamorphization and recrystallization on indium doping profiles in silicon
Duffy R, Venezia VC, Heringa A, Pawlak BJ, Hopstaken MJP, Tamminga Y, Dao T, Roozeboom F, Wang CC, Diaz CH, Griffin PB
Journal of Vacuum Science & Technology B, 22(3), 865, 2004