The effect of preamorphization and solid-phase epitaxial regrowth on indium doping profiles in silicon has been investigated. It is shown that preamorphized silicon significantly reduces channeling during indium ion implantation, producing a much more abrupt doping profile. During recrystallization by thermal annealing, indium segregates in front of the moving amorphous/crystalline interface, creating a clearly visible peak in the doping profile. We establish that the physical mechanism for this phenomenon in the 10(18)-10(19) cm(-3) concentration range is segregation determined, as there is no significant concentration dependence for those doses studied in this work. We also demonstrate that this phenomenon is enhanced at lower temperatures. (C) 2004 American Vacuum Society.