화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
Cordier Y, Lorenzini P, Chauveau JM, Ferre D, Androussi Y, DiPersio J, Vignaud D, Codron JL
Journal of Crystal Growth, 251(1-4), 822, 2003
2 Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps
Cordier Y, Ferre D, Chauveau JM, Dipersio J
Applied Surface Science, 166(1-4), 442, 2000
3 Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers
Cordier Y, Chauveau JM, Ferre D, Dipersio J
Journal of Vacuum Science & Technology B, 18(5), 2513, 2000