검색결과 : 3건
No. | Article |
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1 |
Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs Cordier Y, Lorenzini P, Chauveau JM, Ferre D, Androussi Y, DiPersio J, Vignaud D, Codron JL Journal of Crystal Growth, 251(1-4), 822, 2003 |
2 |
Surface morphology and strain relaxation of InAlAs buffer layers grown lattice mismatched on GaAs with inverse steps Cordier Y, Ferre D, Chauveau JM, Dipersio J Applied Surface Science, 166(1-4), 442, 2000 |
3 |
Comparison of In0.33Al0.67As/In0.34Ga0.66As on GaAs metamorphic high electron mobility transistors grown by molecular beam epitaxy with normal and inverse step on linear graded buffer layers Cordier Y, Chauveau JM, Ferre D, Dipersio J Journal of Vacuum Science & Technology B, 18(5), 2513, 2000 |