Journal of Crystal Growth, Vol.251, No.1-4, 822-826, 2003
Influence of MBE growth conditions on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs
In this work, we investigate the influence of the growth temperature and the arsenic flux on the quality of InAlAs/InGaAs metamorphic HEMTs on GaAs with inverse step based InAlAs buffer layers. We show besides the temperature, how the composition modulations make the arsenic flux a critical parameter for the HEMT quality and lead to the generation of threading dislocations in the inverse step layers when an excessive arsenic flux is involved. (C) 2002 Elsevier Science B.V. All rights reserved.
Keywords:composition modulations;molecular beam epitaxy;metamorphic high electron mobility transistors