검색결과 : 21건
| No. | Article |
|---|---|
| 1 |
Impact of Sb doping on power consumption and retention reliability of GeS2 based conductive bridge random access memory Guy J, Molas G, Vianello E, Carabasse C, Blaise P, Bernard M, Souchier E, Francois P, Aussenac F, Delaye V, Clermidy F, De Salvo B Thin Solid Films, 563, 15, 2014 |
| 2 |
On the impact of Ag doping on performance and reliability of GeS2-based conductive bridge memories Longnos F, Vianello E, Cagli C, Molas G, Souchier E, Blaise P, Carabasse C, Rodriguez G, Jousseaume V, De Salvo B, Dahmani F, Verrier P, Bretegnier D, Liebault J Solid-State Electronics, 84, 155, 2013 |
| 3 |
Material engineering of GexTe100-x compounds to improve phase-change memory performances Navarro G, Sousa V, Persico A, Pashkov N, Toffoli A, Bastien JC, Perniola L, Maitrejean S, Roule A, Zuliani P, Annunziata R, De Salvo B Solid-State Electronics, 89, 93, 2013 |
| 4 |
Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory Cabout T, Buckley J, Cagli C, Jousseaume V, Nodin JF, de Salvo B, Bocquet M, Muller C Thin Solid Films, 533, 19, 2013 |
| 5 |
Study of resistive random access memory based on TiN/TaOx/TiN integrated into a 65 nm advanced complementary metal oxide semiconductor technology Diokh T, Le-Roux E, Jeannot S, Cagli C, Jousseaume V, Nodin JF, Gros-Jean M, Gaumer C, Mellier M, Cluzel J, Carabasse C, Candelier P, De Salvo B Thin Solid Films, 533, 24, 2013 |
| 6 |
Recent results on organic-based molecular memories De Salvo B, Buckley J, Vuillaume D Current Applied Physics, 11(2), E49, 2011 |
| 7 |
Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs Jousseaume V, Fantini A, Nodin JF, Guedj C, Persico A, Buckley J, Tirano S, Lorenzi P, Vignon R, Feldis H, Minoret S, Grampeix H, Roule A, Favier S, Martinez E, Calka P, Rochat N, Auvert G, Barnes JP, Gonon P, Vallee C, Perniola L, De Salvo B Solid-State Electronics, 58(1), 62, 2011 |
| 8 |
Investigation of charge-trap memories with AlN based band engineered storage layers Molas G, Colonna JP, Kies R, Belhachemi D, Bocquet M, Gely M, Vidal V, Brianceau P, Martinez E, Papon AM, Licitra C, Vandroux L, Ghibaudo G, De Salvo B Solid-State Electronics, 58(1), 68, 2011 |
| 9 |
Modeling of program, erase and retention characteristics of charge-trap gate all around memories Nowak E, Perniola L, Ghibaudo G, Molas G, Reimbold G, De Salvo B, Boulanger F Solid-State Electronics, 58(1), 75, 2011 |
| 10 |
Carbon-doped GeTe: A promising material for Phase-Change Memories Beneventi GB, Perniola L, Sousa V, Gourvest E, Maitrejean S, Bastien JC, Bastard A, Hyot B, Fargeix A, Jahan C, Nodin JF, Persico A, Fantini A, Blachier D, Toffoli A, Loubriat S, Roule A, Lhostis S, Feldis H, Reimbold G, Billon T, De Salvo B, Larcher L, Pavan P, Bensahel D, Mazoyer P, Annunziata R, Zuliani P, Boulanger F Solid-State Electronics, 65-66, 197, 2011 |