화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Characterization of P-channel power trench MOSFETs with polycrystalline silicon germanium gate electrode for faster switching
Dikshit R, Daggubati M
Solid-State Electronics, 68, 4, 2012
2 Nucleation of boron phosphate in as-deposited borophosphosilicate glass films
Sokolov YV, Wang Q, Daggubati M
Journal of the Electrochemical Society, 155(3), H188, 2008
3 Interstitial oxygen-related defects and current leakage in trench metal-oxide-semiconductor field-effect transistor on epi/As++ structure
Wang Q, Daggubati M, Paravi H, Yu R, Zhang XF
Journal of Vacuum Science & Technology A, 24(4), 1238, 2006
4 Dependence of power trench metal-oxide-semiconductor field-effect transistor processes on wafer thickness
Daggubati M, Sim G, Long D, Paravi H, Wang Q
Journal of Vacuum Science & Technology A, 24(4), 1289, 2006