검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Progress in Z(2)-FET 1T-DRAM: Retention time, writing modes, selective array operation, and dual bit storage Wan J, Le Royer C, Zaslavsky A, Cristoloveanu S Solid-State Electronics, 84, 147, 2013 |
| 2 |
Structure and property changes of ZrO2/Al2O3/ZrO2 laminate induced by low-temperature NH3 annealing applicable to metal-insulator-metal capacitor Li MY, Tsai BS, Jiang PC, Wu HC, Wu YH, Lin YJ Thin Solid Films, 518(18), 5272, 2010 |
| 3 |
Innovating SOI memory devices based on floating-body effects Bawedin M, CristoloveanU S, Flandre D Solid-State Electronics, 51(10), 1252, 2007 |
| 4 |
New TIT capacitor with ZrO2/Al2O3/ZrO2 dielectrics for 60 nm and below DRAMs Cho HJ, Kim YD, Park DS, Lee E, Park CH, Jang JS, Lee KB, Kim HW, Ki YJ, Han K, Song YW Solid-State Electronics, 51(11-12), 1529, 2007 |
| 5 |
Fully integrated 512 Mb DRAMs with HSG-merged-AHO cylinder capacitor Kim SG, Hyun CS, Park D, Cho TH, Suk JG, Hong HS, Lee KY, Oh KS Solid-State Electronics, 50(6), 1030, 2006 |
| 6 |
Evolution of materials technology for stacked-capacitors in 65 nm embedded-DRAM Gerritsen E, Emonet N, Caillat C, Jourdan N, Piazza M, Fraboulet D, Boeck B, Berthelot A, Smith S, Mazoyer P Solid-State Electronics, 49(11), 1767, 2005 |
| 7 |
Characterization and leakage current density of radio frequency magnetron sputtered nanocrstalline SrTiO3 thin films Wang MC, Hsiao FY, Wu NC Journal of Crystal Growth, 264(1-3), 271, 2004 |