검색결과 : 7건
| No. | Article |
|---|---|
| 1 |
Pulling rate, rotation speed 및 melt charge level 최적화에 의한 쵸크랄스키 공정 실리콘 단결정의 O2 불순물 최소화 설계 전혜준, 박주홍, 블라디미르 아르테미예프, 황선희, 송수진, 김나영, 정재학 Korean Chemical Engineering Research, 58(3), 369, 2020 |
| 2 |
Development of batch proportional-integral-derivative controller Kwon WH, Ryu KH, Kwang JA, Kim KH, Lee JH, Sung SW Korean Journal of Chemical Engineering, 35(6), 1240, 2018 |
| 3 |
Run-To-Run control of the Czochralski process Rahnianpour P, Saelid S, Hovd M Computers & Chemical Engineering, 104, 353, 2017 |
| 4 |
Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals Noghabi OA, M'Hamdi M, Jomaa M Journal of Crystal Growth, 318(1), 173, 2011 |
| 5 |
Silicon ingot diameter modeling in Czochralski process and its dynamic simulation Park JS, Seo M, Oh HJ, Jung JH Korean Journal of Chemical Engineering, 25(4), 623, 2008 |
| 6 |
Single-grain Si thin-film transistors SPICE model, analog and RF circuit applications Baiano A, Danesh M, Saputra N, Ishihara R, Long J, Metselaar W, Beenakker CIM, Karaki N, Hiroshima Y, Inoue S Solid-State Electronics, 52(9), 1345, 2008 |
| 7 |
Analytical studies on the crystal-melt interface shape in the Czochralski process for oxide single crystals Jeong JH, Kang IS Journal of Crystal Growth, 218(2-4), 294, 2000 |