Pulling rate, rotation speed 및 melt charge level 최적화에 의한 쵸크랄스키 공정 실리콘 단결정의 O2 불순물 최소화 설계

전혜준; 박주홍; 블라디미르 아르테미예프; 황선희; 송수진; 김나영; 정재학; Hye Jun Jeon; Ju Hong Park; Vladimir Artemyev; Seon Hee Hwang; Su Jin Song; Na Yeong Kim; Jae Hak Jung

Korean Chemical Engineering Research, Vol.58, No.3, 369-380, June, 2020

DOI10.9713/kcer.2020.58.3.369 Export Citation

Pulling rate, rotation speed 및 melt charge level 최적화에 의한 쵸크랄스키 공정 실리콘 단결정의 O2 불순물 최소화 설계

A Czochralski Process Design for Si-single Crystal O2 Impurity Minimization with Pulling Rate, Rotation Speed and Melt Charge Level Optimization

전혜준, 박주홍¹, 블라디미르 아르테미예프², 황선희, 송수진, 김나영, 정재학^†

영남대학교 화학공학부, 38541 경상북도 경산시 대학로 280
¹폴텍(주) 기술영업팀, 05084 서울특별시 광진구 능동로 3길 54
²STR그룹, STR, 194044 64 볼쇼이 샘프소니예프스키 pr, 빌드. E, 러시아 상트페테르부르크

Hye Jun Jeon, Ju Hong Park¹, Vladimir Artemyev², Seon Hee Hwang, Su Jin Song, Na Yeong Kim, and Jae Hak Jung^†

Department of Chemical engineering, Yeungnam University, 280, Daehak-ro, Gyeongsan-si, Gyeongsangbuk-do,38541, Korea
¹T Paultec echnical Team, 54, Neungdong-ro 3-gil, Gwangjin-gu, Seoul, 05084, Korea
²STR soft-Group, 194044 Inc., 64 Bolshoi Sampsonievskii pr., Build. E, Office 605, St. Petersburg, Russia, Russian Federation

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초록

대부분의 단결정 실리콘 잉곳은 초크랄스키(Czochralski(Cz)) 공정으로 제조된다. 그러나 단결정 실리콘 잉곳을 제품화 및 태양 전지 기판으로 가공하였을 때 산소 불순물이 있는 경우 낮은 효율성을 나타내는 경향이 있다. 단결정 Si-잉 곳의 생산을 위해서는 용융 Si를 녹인 다음 단결정 Si의 시드(Seed)로 결정화하는 초크랄스키(Cz) 공정을 도입한다. 용융된 다결정 Si-덩어리를 단결정 Si-잉곳으로 결정성장 될 때, 열 전달은 Cz-공정의 구조에서 중요한 역할을 한다. 본 연구에서 고품질 단결정 실리콘 잉곳을 얻기 위해 Cz-공정의 최적화된 설계를 구성하였다. 결정 성장 시뮬레이션로부터 결정성장을 위한 Pulling rate 및 Rotation speed에 최적의 변수값을 형성하기 위해 사용되었으며, 변형된 Cz-공정에 대한 연구 및 해당 결과가 논의되며 결정 성장 시뮬레이션을 사용하여 Cz-공정의 Pulling rate, Rotation speed 및 Melt charge level의 최적화된 설계로 인한 결정성장시 단결정 실리콘으로 유입되는 산소 농도 최소화를 설계하였다.

Most mono-crystalline silicon ingots are manufactured by the Czochralski (Cz) process. But If there are oxygen impurities, These Si-ingot tends to show low-efficiency when it is processed to be solar cell substrate. For making single-crystal Si- ingot, We need Czochralski (Cz) process which melts molten Si and then crystallizing it with seed of single-crystal Si. For melts poly Si-chunk and forming of single-crystalline Si-ingot, the heat transfer plays a main role in the structure of Cz-process. In this study to obtain high-quality Si ingot, the Cz-process was modified with the process design. The crystal growth simulation was employed with pulling rate and rotation speed optimization. Studies for modified Cz-process and the corresponding results have been discussed. The results revealed that using crystal growth simulation, we optimized the oxygen concentration of single crystal silicon by the optimal design of the pulling rate, rotation speed and melt charge level of Cz-process.

Keywords:Czochralski process;Crystal growth simulation;Oxygen;Si-Ingot;Melt charge level;Optimization

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[2] Kulkarni MS, Holzer JC, Ferry LW, J. Cryst. Growth, 284, 35 (2005)

[3] Vorob'ev AN, Sid'ko AP, Kalaev VV, J. Cryst. Growth, 386, 226 (2014)

[4] Voronkov VV, Flaster R, J. Electrochem. Soc., 149(3), 167 (2002)

[5] Ammon W, Dornberger E, Oelkrug H, Weidner H, J. Cryst. Growth, 151, 273 (1995)

[6] Kim JH, Hanyang University Master’s Thesis(2007).

[7] von Ammon W, Friedrich J, Muller G, Handbook of Crystal Growth (second ed.), Elsevier, 45-104(2014).

[8] Ammon WV, Gelfgat Y, Gorbunov L, et al., “Proceedings of 6th PAMIR International Conference on Fundamental and Applied MHD,” 41(2005).

[9] Hwang DH, Doctor’s Thesis, Dept. Material Eng., Chungnam National Univ., Daejeon, Korea(2002).

[10] Kim JH, Master’s Thesis, Dept. Material Eng., Sungkunkwan Univ., Seoul, Korea(2007).

[11] Lee JS, Kim KH, Solar Cell Engineering, Seoul, Korea: Book Publication in GREEN Energy(2007).

[12] Sim BC, Kim WS, Zebib A, J. Thermophys. Heat Transf., 16, 553 (2002)

[13] Sim BC, Kim WS, Zebib Z, Journal of Heat Mass Transfer, 332, 473-486(2004).

[14] Rozgonyi GA, Deysher RP, Pearce CW, J. Electrochem. Soc., 123, 1910 (1976)

[15] Shockley W, Read WT, Phys. Rev., 87, 835 (1952)

[16] Lee YR, Jung JH, Photovoltaic Research, 4(3), 124 (2016)

[17] Shockley W. Read WT, Physical Review Journals, 87, 835 (1952)

[18] Kalaev VV, Lukanin DP, Zabelin VA, Makarov YN, Virbulis J, Dornberger E, von Ammon W, J. Cryst. Growth, 250(1-2), 203 (2003)

[19] Kakimoto K, Eguchi M, Watanabe H, Hibiya T, J. Cryst. Growth, 126, 435 (1993)