검색결과 : 23건
| No. | Article |
|---|---|
| 1 |
New Y-function based MOSFET parameter extraction method from weak to strong inversion range Henry JB, Rafhay Q, Cros A, Ghibaudo G Solid-State Electronics, 123, 84, 2016 |
| 2 |
Magnetoresistance mobility characterization in advanced FD-SOI n-MOSFETs Shin M, Shi M, Mouis M, Cros A, Josse E, Mukhopadhyay S, Piot B, Kim GT, Ghibaudo G Solid-State Electronics, 103, 229, 2015 |
| 3 |
Low temperature characterization of mobility in 14 nm FD-SOI CMOS devices under interface coupling conditions Shin M, Shi M, Mouis M, Cros A, Josse E, Kim GT, Ghibaudo G Solid-State Electronics, 108, 30, 2015 |
| 4 |
In depth characterization of electron transport devices in 14 nm FD-SOI CMOS Shin M, Shi M, Mouis M, Cros A, Josse E, Kim GT, Ghibaudo G Solid-State Electronics, 112, 13, 2015 |
| 5 |
Full split C-V method for parameter extraction in ultra thin BOX FDSOI MOS devices Shin MJ, Shi M, Mouis M, Cros A, Josse E, Kim GT, Ghibaudo G Solid-State Electronics, 99, 104, 2014 |
| 6 |
New parameter extraction method based on split C-V measurements in FDSOI MOSFETs Ben Akkez I, Cros A, Fenouillet-Beranger C, Boeuf F, Rafhay Q, Balestra F, Ghibaudo G Solid-State Electronics, 84, 142, 2013 |
| 7 |
"Y function" method applied to saturation regime: Apparent saturation mobility and saturation velocity extraction Diouf C, Cros A, Monfray S, Mitard J, Rosa J, Gloria D, Ghibaudo G Solid-State Electronics, 85, 12, 2013 |
| 8 |
Impact of Ge proportion on advanced SiGe bulk P-MOSFET matching performances Rahhal L, Bajolet A, Cros A, Diouf C, Kergomard F, Rosa J, Bidal G, Bianchi RA, Ghibaudo G Solid-State Electronics, 85, 15, 2013 |
| 9 |
Unexpected impact of germanium content in SiGe bulk PMOSFETs Diouf C, Cros A, Soussou A, Rideau D, Haendler S, Rosa J, Ghibaudo G Solid-State Electronics, 86, 45, 2013 |
| 10 |
Study of substrate orientations impact on Ultra Thin Buried Oxide (UTBOX) FDSOI High-K Metal gate technology performances Ben Akkez I, Fenouillet-Beranger C, Cros A, Perreau P, Haendler S, Weber O, Andrieu F, Pellissier-Tanon D, Abbate F, Richard C, Beneyton R, Gouraud P, Margain A, Borowiak C, Gourvest E, Bourdelle KK, Nguyen BY, Poiroux T, Skotnicki T, Faynot O, Balestra F, Ghibaudo G, Boeuf F Solid-State Electronics, 90, 143, 2013 |