검색결과 : 1건
| No. | Article |
|---|---|
| 1 |
A parasitic resistance measurement method exploiting gate current-density characteristics in ultra-short Schottky-gate FETs Inoue T, Contrata W Solid-State Electronics, 52(11), 1735, 2008 |
| No. | Article |
|---|---|
| 1 |
A parasitic resistance measurement method exploiting gate current-density characteristics in ultra-short Schottky-gate FETs Inoue T, Contrata W Solid-State Electronics, 52(11), 1735, 2008 |