검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Investigation of charge-trap memories with AlN based band engineered storage layers Molas G, Colonna JP, Kies R, Belhachemi D, Bocquet M, Gely M, Vidal V, Brianceau P, Martinez E, Papon AM, Licitra C, Vandroux L, Ghibaudo G, De Salvo B Solid-State Electronics, 58(1), 68, 2011 |
| 2 |
Impact of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories Bocquet M, Molas G, Perniola L, Garros X, Buckley J, Gely M, Colonna JP, Grampeix H, Martin F, Vidal V, Toffoli A, Deleonibus S, Ghibaudo G, Pananakakis G, De Salvo B Solid-State Electronics, 53(7), 786, 2009 |
| 3 |
Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories Molas G, Bocquet M, Buckley J, Grampeix H, Gely M, Colonna JP, Licitra C, Rochat N, Veyront T, Garros X, Martin F, Brianceau P, Vidal V, Bongiorno C, Lombardo S, De Salvo B, Deleonibus S Solid-State Electronics, 51(11-12), 1540, 2007 |