| 1 |
Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition
Wang BG, Fang ZQ, Claflin B, Look D, Kouvetakis J, Yeo YK
Thin Solid Films, 654, 77, 2018 |
| 2 |
UV light-induced changes to the surface conduction in hydrothermal ZnO
Claflin B, Look DC
Journal of Vacuum Science & Technology B, 27(3), 1722, 2009 |
| 3 |
Metal contacts on bulk ZnO crystal treated with remote oxygen plasma
Fang ZQ, Claflin B, Look DC, Dong YF, Brillson L
Journal of Vacuum Science & Technology B, 27(3), 1774, 2009 |
| 4 |
Persistent n-type photoconductivity in p-type ZnO
Claflin B, Look DC, Park SJ, Cantwell G
Journal of Crystal Growth, 287(1), 16, 2006 |
| 5 |
Identification of donors, acceptors, and traps in bulk-like HVPE GaN
Look DC, Fang ZQ, Claflin B
Journal of Crystal Growth, 281(1), 143, 2005 |
| 6 |
Interface studies of tungsten nitride and titanium nitride composite metal gate electrodes with thin dielectric layers
Claflin B, Binger M, Lucovsky G
Journal of Vacuum Science & Technology A, 16(3), 1757, 1998 |
| 7 |
Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers
Claflin B, Lucovsky G
Journal of Vacuum Science & Technology B, 16(4), 2154, 1998 |
| 8 |
Minimization of Suboxide Transition Regions at Si-SiO2 Interfaces by 900 Degrees-C Rapid Thermal Annealing
Lucovsky G, Banerjee A, Hinds B, Claflin B, Koh K, Yang H
Journal of Vacuum Science & Technology B, 15(4), 1074, 1997 |
