The compatibility of metallic titanium nitride (TiNx) films for advanced gate electrodes and remote plasma enhanced chemical vapor deposited silicon oxide (SiO2) or silicon oxide/silicon nitride (Si3N4) advanced gate dielectric layers is investigated by interrupted growth and on-line rapid thermal annealing using on-line Auger electron spectroscopy. Growth of TiNx on SiO2 and Si3N4 occurs uniformly without a titanium seed layer. TiNx/SiO2 and TiNx/Si3N4 interfaces are chemically stable against reaction for rapid thermal annealing treatments below 850 degrees C. Metaloxide-semiconductor capacitors using TiNx, gate contacts and SiO2 or SiO2/Si3N4 gate dielectrics exhibit excellent C-V characteristics. The measured TiNx,/SiO2 barrier height in these devices is Phi(b)=3.7+/-0.1 eV. The observed difference in fixed charge for SiO2 and SiO2/Si3N4 dielectrics is briefly discussed in terms of a new interface dipole model.