화학공학소재연구정보센터
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No. Article
1 Schottky gating high mobility Si/Si1-xGex 2D electron systems
Dunford RB, Griffin N, Paul DJ, Pepper M, Robbins DJ, Churchill AC, Leong WY
Thin Solid Films, 369(1-2), 316, 2000
2 Si/SiGe n-type inverted modulation doping using ion implantation
Ahmed A, Dunford RB, Paul DJ, Pepper M, Churchill AC, Robbins DJ, Pidduck AJ
Thin Solid Films, 369(1-2), 324, 2000
3 A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems
Leong WY, Churchill AC, Robbins DJ, Glasper JL, Williams GM
Thin Solid Films, 369(1-2), 375, 2000
4 Two-dimensional electron gas mobility as a function of virtual substrate quality in strained Si/SiGe heterojunctions
Churchill AC, Robbins DJ, Wallis DJ, Griffin N, Paul DJ, Pidduck AJ, Leong WY, Williams GM
Journal of Vacuum Science & Technology B, 16(3), 1634, 1998
5 Electrical properties and uniformity of two dimensional electron gases grown on cleaned SiGe virtual substrates
Paul DJ, Ahmed A, Pepper M, Churchill AC, Robbins DJ, Wallis DJ, Pidduck AJ
Journal of Vacuum Science & Technology B, 16(3), 1644, 1998
6 Cyclotron resonance measurements of Si/SiGe two-dimensional electron gases with differing strain
Griffin N, Arnone DD, Paul DJ, Pepper M, Robbins DJ, Churchill AC, Fernandez JM
Journal of Vacuum Science & Technology B, 16(3), 1655, 1998
7 Electrical properties of two-dimensional electron gases grown on cleaned SiGe virtual substrates
Paul DJ, Ahmed A, Griffin N, Pepper M, Churchill AC, Robbins DJ, Wallis DJ
Thin Solid Films, 321(1-2), 181, 1998
8 Use of Narrow Collector Layers in Si and Si1-xGex Bipolar-Transistors
Leong WY, Churchill AC, Robbins DJ, Lambert A
Thin Solid Films, 294(1-2), 274, 1997
9 Fabrication of Independent Contacts to 2 Closely Spaced 2-Dimensional Electron Gases Using Molecular-Beam Epitaxy Regrowth and in-Situ Focused Ion-Beam Lithography
Brown KM, Linfield EH, Ritchie DA, Jones GA, Grimshaw MP, Churchill AC
Journal of Vacuum Science & Technology B, 12(2), 1293, 1994
10 Optimization of High-Mobility 2-Dimensional Hole Gases
Simmons MY, Ritchie DA, Zailer I, Churchill AC, Jones GA
Journal of Vacuum Science & Technology B, 12(2), 1296, 1994