We describe the fabrication of a self-aligned epitaxially grown channel MOSFET device suitable for the strained Si/SiGe systems. This device architecture relies on a selective epitaxy process to achieve self-alignment and contact formation of the source and drain. It is also amenable in a conventional Si VLSI manufacturing environment. Difficulties encountered with growing high quality source/drain contacts to the channel layer were highlighted and a novel solution was proposed. Structural as well as electrical characterisation of the completed devices are presented.