검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Thermodynamic evaluation of nucleation as a method for selection of aluminium nitride modifications Kudyakova VS, Shishkin RA, Zykov FM, Zvonarev KV, Chukin AV, Polyakov EV, Beketov AR Journal of Crystal Growth, 486, 111, 2018 |
| 2 |
Investigation of bonded hydrogen defects in nanocrystalline diamond films grown with nitrogen/methane/hydrogen plasma at high power conditions Tang CJ, Hou HH, Fernandes AJS, Jiang XF, Pinto JL, Ye H Journal of Crystal Growth, 460, 16, 2017 |
| 3 |
Very low temperature epitaxy of Ge and Ge rich SiGe alloys with Ge2H6 in a Reduced Pressure - Chemical Vapour Deposition tool Aubin J, Hartmann JM, Bauer M, Moffatt S Journal of Crystal Growth, 445, 65, 2016 |
| 4 |
Thin films of tin(II) sulphide (SnS) by aerosol-assisted chemical vapour deposition (AACVD) using tin(II) dithiocarbamates as single-source precursors Kevin P, Lewis DJ, Raftery J, Malik MA, O'Brien P Journal of Crystal Growth, 415, 93, 2015 |
| 5 |
Atmospheric pressure chemical vapour deposition of electrochromic Mo-W thin oxide films: Structural, optoelectronic and vibration properties Gesheva KA, Ivanova T, Kozlov M, Boyadzhiev S Journal of Crystal Growth, 312(8), 1188, 2010 |
| 6 |
Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates Mauder C, Reuters B, Khoshroo LR, Rzheutskii MV, Lutsenko EV, Yablonskii GP, Woitok JF, Heuken M, Kalisch H, Jansen RH Journal of Crystal Growth, 312(11), 1823, 2010 |
| 7 |
Improved morphology for epitaxial growth on 4 degrees off-axis 4H-SiC substrates Leone S, Pedersen H, Henry A, Kordina O, Janzen E Journal of Crystal Growth, 311(12), 3265, 2009 |
| 8 |
Impact of the H-2 bake temperature on the structural properties of tensily strained Si layers on SiGe Hartmann JM, Bogumilowciz Y, Abbadie A, Fillot F, Billon T Journal of Crystal Growth, 310(10), 2493, 2008 |
| 9 |
Formation of a Si-Si3N4 nanocomposite from plasma enhanced chemical vapour deposition multilayer structures Scardera G, Bellet-Amalric E, Bellet D, Puzzer T, Pink E, Conibeer G Journal of Crystal Growth, 310(15), 3685, 2008 |
| 10 |
4H-SiC epitaxial layer growth by trichlorosilane (TCS) La Via F, Izzo G, Mauceri M, Pistone G, Condorelli G, Perdicaro L, Abbondanza G, Calcagno L, Foti G, Crippa D Journal of Crystal Growth, 311(1), 107, 2008 |