검색결과 : 16건
| No. | Article |
|---|---|
| 1 |
Boron-doping induced Sn loss in GeSn alloys grown by chemical vapor deposition Tsai CE, Lu FL, Chen PS, Liu CW Thin Solid Films, 660, 263, 2018 |
| 2 |
Glide of threading edge dislocations after basal plane dislocation conversion during 4H-SiC epitaxial growth Abadier M, Song HZ, Sudarshan TS, Picard YN, Skowronski M Journal of Crystal Growth, 418, 7, 2015 |
| 3 |
Chemical vapor deposition processes for the fabrication of epitaxial Si-O superlattices Jayachandran S, Delabie A, Maggen J, Caymax M, Loo R, Meersschaut J, Lenka H, Vandervorst W, Heyns M Thin Solid Films, 557, 36, 2014 |
| 4 |
Basal plane dislocation conversion near the epilayer/substrate interface in epitaxial growth of 4 degrees off-axis 4H-SiC Song HZ, Sudarshan TS Journal of Crystal Growth, 371, 94, 2013 |
| 5 |
Phosphorus atomic layer doping in Ge using RPCVD Yamamoto Y, Kurps R, Mai C, Costina I, Murota J, Tillack B Solid-State Electronics, 83, 25, 2013 |
| 6 |
Faceting and nanostructure effects in Si and SiGe epitaxy Dutartre D, Seiss B, Campidelli Y, Pellissier-Tanon D, Barge D, Pantel R Thin Solid Films, 520(8), 3163, 2012 |
| 7 |
Multiscale simulation for epitaxial silicon carbide growth by chlorides route Masi M, Fiorucci A, Camarda M, La Magna A, La Via F Thin Solid Films, 518, S6, 2010 |
| 8 |
Epitaxial film growth of chromium dioxide by low pressure chemical vapor deposition using chromium carbonyl Wang JW, Pathak M, Zhong X, LeClair P, Klein TM, Gupta A Thin Solid Films, 518(23), 6853, 2010 |
| 9 |
Epitaxial growth of lithium niobate film using metalorganic chemical vapor deposition Akiyama Y, Shitanaka K, Murakami H, Shin YS, Yoshida M, Imaishi N Thin Solid Films, 515(12), 4975, 2007 |
| 10 |
Epitaxial SiC grown on silicon-on-insulator substrate with ultra-thin silicon-over-layer Huang FY, Wang XF, Sun GS, Zhao WS, Zeng YP, Bian EL Thin Solid Films, 484(1-2), 261, 2005 |