검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Parasitic electrostatic capacitance of high-speed SiGe Heterojunction Bipolar Transistors Zerounian N, Aniel F, Barbalat B, Chevalier P, Chantre A Solid-State Electronics, 53(5), 483, 2009 |
| 2 |
A selective epitaxy collector module for high-speed Si/SiGe:C HBTs Geynet B, Chevalier P, Brossard F, Vandelle B, Schwartzmann T, Buczko M, Avenier G, Dutartre D, Dambrine G, Danneville F, Chantre A Solid-State Electronics, 53(8), 873, 2009 |
| 3 |
Thin film SOIHBT: A study of the effect of substrate bias on the electrical characteristics Fregonese S, Avenier G, Maneux C, Chantre A, Zimmer T Solid-State Electronics, 50(11-12), 1673, 2006 |
| 4 |
Transit times of SiGe : C HBTs using nonselective base epitaxy Zerounian N, Rodriguez M, Enciso M, Aniel F, Chevalier P, Martinet B, Chantre A Solid-State Electronics, 48(10-11), 1993, 2004 |
| 5 |
Evaluation of transport properties of ozonized poly/mono interfaces in polysilicon emitter bipolar transistors Niel S, Chantre A, Llinares P, Laurens M, Vincent G Solid-State Electronics, 44(6), 963, 2000 |
| 6 |
Integration of SiGe Heterojunction Bipolar-Transistors in a 200 mm Industrial BiCMOS Technology Deberranger E, Bodnar S, Chantre A, Kirtsch J, Monroy A, Granier A, Laurens M, Regolini JL, Mouis M Thin Solid Films, 294(1-2), 250, 1997 |