검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Temperature dependence of charge transport in zinc oxide nanosheet source-gated transistors Dahiya AS, Opoku C, Cayrel F, Valente D, Poulin-Vittrant G, Camara N, Alquier D Thin Solid Films, 617, 114, 2016 |
| 2 |
Optical nano-imaging of gate-tunable graphene plasmons Chen JN, Badioli M, Alonso-Gonzalez P, Thongrattanasiri S, Huth F, Osmond J, Spasenovic M, Centeno A, Pesquera A, Godignon P, Elorza AZ, Camara N, de Abajo FJG, Hillenbrand R, Koppens FHL Nature, 487(7405), 77, 2012 |
| 3 |
Rapid Growth of Oxide Films on SiC by Photo-Assisted Mechanism Constant A, Camara N, Montserrat J, Camassel J, Godignon P Electrochemical and Solid State Letters, 14(6), G42, 2011 |
| 4 |
Interfacial Properties of Oxides Grown on 3C-SiC by Rapid Thermal Processing Constant A, Camara N, Placidi M, Decams JM, Camassel J, Godignon P Journal of the Electrochemical Society, 158(1), G13, 2011 |
| 5 |
Effects of Photons on 4H-SiC Rapid Thermal Oxidation Using Nitrous Oxide Gas Constant A, Camara N, Godignon P, Placidi M, Perez-Tomas A, Camassel J Journal of the Electrochemical Society, 157(6), G136, 2010 |
| 6 |
Nanostructuring of epitaxial graphene layers on SiC by means of field-induced atomic force microscopy modification Rius G, Camara N, Godignon P, Perez-Murano F, Mestres N Journal of Vacuum Science & Technology B, 27(6), 3149, 2009 |
| 7 |
Characterisation of 4H-SiC pin diodes by micro-Raman scattering and photoemission Thuaire A, Mermoux M, Crisci A, Camara N, Bano E, Baillet F, Pernot E Materials Science Forum, 483, 437, 2005 |
| 8 |
Forward-bias degradation in 4H-SiC p(+)nn(+) diodes: Influence of the mesa etching Camara N, Thuaire A, Bano E, Zekentes K Materials Science Forum, 483, 773, 2005 |
| 9 |
Investigation of microwave switching 4HSiC p-i-n diodes in the 20 divided by 500 degrees C temperature range Boltovets MS, Basanets VV, Camara N, Krivutsa VA, Zekentes K Materials Science Forum, 483, 997, 2005 |
| 10 |
Theoretical investigations of the microwave characteristics of TUNNETT diodes made of silicon carbide Buniatyan VV, Aroutiounian VM, Zekentes K, Camara N, Soukiassian P Materials Science Forum, 457-460, 977, 2004 |