We report on the fast growth of oxide films on SiC using rapid thermal processing. Thanks to the visible and UV radiation coming from the halogen-lamps, we achieved oxidation growth rates 2 orders of magnitude higher than in a classical oxidation furnace. This unusual rapid oxidation can be explained by a model based on space-charge controlled drift of ionic oxidant created in the oxide by charge photo-injected from SiC. This photo-assisted oxide growth is self-limiting, in agreement with the proposed model, and has an activation energy of 0.82 eV which is significantly lower compared to conventional oxidations. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3566063] All rights reserved.