| 1 |
Plasma Parameters and Silicon Etching Kinetics in C4F8 + O-2 + Ar Gas Mixture: Effect of Component Mixing Ratios
Lee BJ, Efremov A, Nam Y, Kwon KH
Plasma Chemistry and Plasma Processing, 40(5), 1365, 2020 |
| 2 |
A novel discovery of a gaseous sH clathrate hydrate former
Kim E, Seo Y
Chemical Engineering Journal, 359, 775, 2019 |
| 3 |
Anti-adhesive characteristics of CHF3/O-2 and C4F8/O-2 plasma-modified silicon molds for nanoimprint lithography
Lee J, Lee J, Lee HW, Kwon KH
Materials Research Bulletin, 69, 120, 2015 |
| 4 |
Reactive high power impulse magnetron sputtering of CFx thin films in mixed Ar/C4F4 and Ar/C4F8 discharges
Schmidt S, Goyenola C, Gueorguiev GK, Jensen J, Greczynski G, Ivanov IG, Czigany Z, Hultman L
Thin Solid Films, 542, 21, 2013 |
| 5 |
Experimental Study of Capacitive RF c-C4F8 Discharge with Synchrotron Vacuum Ultraviolet Photoionization Mass Spectrometry
Zhou ZY, Xie MF, Tang T, Zhang YJ, Yuan T, Qi F, Ni T, Qian XY
Plasma Chemistry and Plasma Processing, 30(3), 391, 2010 |
| 6 |
Fluorocarbon plasmas for nanotexturing of polymers: A route to water-repellent antireflective surfaces
Di Mundo R, De Benedictis V, Palumbo F, d'Agostino R
Applied Surface Science, 255(10), 5461, 2009 |
| 7 |
Influence of substrate type on surface structure of polymeric perfluorocarbon in the initial stage of deposition in Ar/c-C(4)F(8) plasmas
Furuya K, Nakanishi R, Okumura H, Makita M, Harata A
Thin Solid Films, 516(18), 6028, 2008 |
| 8 |
Effect of additive gases on the selective etching of ZrOx film using inductively coupled BCl3-based plasmas
Park SD, Lim JH, Yeom GY
Thin Solid Films, 515(12), 5045, 2007 |
| 9 |
Effect of time-varying axial magnetic field on high aspect ratio contact hole etching
Song HY, Choi YH, O BH, Park SG, Oh JS, Kim JW
Thin Solid Films, 435(1-2), 247, 2003 |
| 10 |
Rate coefficient for self-association reaction of CF2 radicals determined in the afterglow of low-pressure C4F8 plasmas
Suzuki C, Sasaki K, Kadota K
Plasma Chemistry and Plasma Processing, 21(1), 139, 2001 |
