화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Determination of silicon oxide precipitate stoichiometry using global and local techniques
Nicolai J, Burle N, Pichaud B
Journal of Crystal Growth, 363, 93, 2013
2 Characterizing and modeling the evolution of silicon oxide precipitates during thermal cycles
Nicolai J, Burle N, Serafino C, Pichaud B
Journal of Crystal Growth, 372, 138, 2013
3 Growth of silicon based germanium tin alloys
Kasper E, Werner J, Oehme M, Escoubas S, Burle N, Schulze J
Thin Solid Films, 520(8), 3195, 2012
4 X-Ray Study of Relaxation Process of Strained GaAs-Layers Grown on (100) Ge Substrates
Burle N, Pichaud B, Guelton N, Saintjacques RG
Thin Solid Films, 260(1), 65, 1995